2.0 0.15 4 . 5 0. 1 5 3 . 5 0 . 2 2.3 0.15 1 . 25 0 . 2 0.203max 0.2 0.05 5 . 3 0.2 features mechanical data m a x i m u m r a t i n g s a nd e lec t r i c a l c h a r a c t er i s t i cs ratings at 25 o c ambient temperature unless otherwise specified s 3 db s 3 gb s 3 jb s 3 kb s 3 mb maximum recurrent peak reverse voltage v rrm 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v ma x i mu m rms v o l t a g e v rws 140 280 420 560 700 v ma x i mu m dc bl o c ki n g v o l t a g e v dc 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v m a x i m um a v e r age f o r w o r d r e c t i f ied c u r r ent v @ t l = 9 0 o c i f ( a v ) a peak f orw ard surge current @ t l = 110c 8.3ms v single half -sine-w ave superimposed on rated v load(jedec method) i f s m a m a x i m um i n s t an t aneous f o r w a r d v ol t age at 3.0 a v f v ma x i mu m dc r e v e r s e c u r r e n t @t a =25 o c at rated dc blockjing voltage @t a = 100 o c t y pi c al jun c t i on c apa c i t an c e c j pf ja operating junction and storage temperature range t j t stg o c t e r m i n a l s : s o l d er p l a t e d , s o l d e r ab l e p er m i l - s t d - 1111 750, method 2026 s u r f a c e m o u n t r e c t i f i e r s do - 2 1 4 a a ( s m b ) polarity: color band denotes cathode end w e i g h t : 0 . 0 0 3 o un c e s , 0 . 093 g r a m 3.0 i r 50 10 0 2. thermal resistance f rom junction to ambient and junction to lead p.c.b.mounted on 0.27''x0.27''(7.0x7.0mm 2 ) copper pad areas 3 5 o c/w t y pi c a l t he r m a l r e s i t an c e (note 2) 1 00 1.15 -55--------+150 10 n o t e : 1 . measured at 1.0mhz and applied reverse voltage of 4.0 volts 100 35 70 p l a s t i c p a ck a ge h a s u n d e r w r i t e rs l a b or a t o ry 1 1 1 f l a m m a b i l i t y c l a ss i f i c a t i o n 9 4 v - 0 100 for surface mounted applications 50 s 3 bb units glass passivated chip junction s 3 a b - - - s 3 m b 111 reverse voltage: 50 --- 1000 v c u r r en t : 3.0 a built-in strain relief,ideal for automated placement c a s e : j e d e c d o - 2 1 4 a a , m o l d e d p l a s t i c o v er 1111 passivated chip high temperature soldering: 111 250 o c/10 seconds at terminals low profile package s 3 ab dimensions in millimeters 40 r diode semiconductor korea www.diode.kr
0 . 4 0 . 01 0 . 1 1 10 0 . 6 0 . 8 1 . 0. 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 100 t j =25 c o puise width=300 s 1%duty cycle 0 20 40 60 80 1 0 0 1 10 100 0.01 0 . 001 0.1 t j =125 c t j =75 c t j =25 c o o o 1 1 1 0 1 0 0 t l =110 c 8.3ms single half sine wave (jedec method) 50 o 100 2.0 1.0 0 50 resistive or inductive load 60hz resistive or inductive load p.c.b.mounted 0.27''x0.27''(7.0x7.0mm) thick copperpand areas 3.0 60 70 80 90 100 110 120 130 140 150 average forward current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,microamperes junction capacitance pf fi g. 5-typi cal juncti on capaci tance reverse voltage,volts lead temperature number of cycles at 60hz instantaneous forward voltage,volts s 3 a b - - - s 3 m b fi g. 3 -- typi cal forward characteri sti cs fi g. 4 -- typi cal reverse characteri sti cs fi g. 1 -- forward derati ng curve fi g. 2 peak forward surge current percent of rated peak reverse voltage, .2 2 1 .1 4 .4 1.0 2 40 10 20 60 100 4 10 20 40 100 f=1mhz t j =25 www.diode.kr diode semiconductor korea
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